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Formation of ultrasmall germanium nanoislands with a high density on an atomically clean surface of silicon oxide

  • Proceedings of the Conference “Nanophotonics 2004” (Nizhni Novgorod, Russia, May 2–6, 2004)
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Abstract

The experimental results of an investigation into the initial stages of growth of a germanium film on an atomically clean oxidized silicon surface are reported. It is shown that the growth of the germanium film in this system occurs through the Volmer-Weber mechanism. Elastically strained nanoislands with a lateral size of less than 10 nm and a density of 2 × 1012 cm−2 are formed on the oxidized silicon surface. In germanium films with a thickness greater than 5 monolayers (ML), there also arise completely relaxed germanium nanoislands with a lateral size of up to 200 nm and a density of 1.5 × 109 cm−2.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia

    A. I. Nikiforov, V. V. Ul’yanov, O. P. Pchelyakov, S. A. Teys & A. K. Gutakovsky

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  1. A. I. Nikiforov
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  2. V. V. Ul’yanov
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  3. O. P. Pchelyakov
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  4. S. A. Teys
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  5. A. K. Gutakovsky
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__________

Translated from Fizika Tverdogo Tela, Vol. 47, No. 1, 2005, pp. 67–69.

Original Russian Text Copyright © 2005 by Nikiforov, Ul’yanov, Pchelyakov, Teys, Gutakovsky.

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Nikiforov, A.I., Ul’yanov, V.V., Pchelyakov, O.P. et al. Formation of ultrasmall germanium nanoislands with a high density on an atomically clean surface of silicon oxide. Phys. Solid State 47, 67–70 (2005). https://doi.org/10.1134/1.1853447

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  • DOI: https://doi.org/10.1134/1.1853447

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