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Si1−x Gex/Si(001) relaxed buffer layers grown by chemical vapor deposition at atmospheric pressure

  • Proceedings of the Conference “Nanophotonics 2004” (Nizhni Novgorod, Russia, May 2–6, 2004)
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Abstract

Relaxed step-graded buffer layers of Si1−x Gex/Si(001) heterostructures with a low density of threading dislocations are grown through chemical vapor deposition at atmospheric pressure. The surface of the Si1−x Gex/Si(001) (x ∼ 25%) buffer layers is subjected to chemical mechanical polishing. As a result, the surface roughness of the layers is decreased to values comparable to the surface roughness of the Si(001) initial substrates. It is demonstrated that Si1−x Gex/Si(001) buffer layers with a low density of threading dislocations and a small surface roughness can be used as artificial substrates for growing SiGe/Si heterostructures of different types through molecular-beam epitaxy.

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Authors and Affiliations

  1. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia

    N. V. Vostokov, Yu. N. Drozdov, Z. F. Krasil’nik, A. V. Novikov & M. V. Shaleev

  2. Nizhni Novgorod State University, pr. Gagarina 23/5, Nizhni Novgorod, 603950, Russia

    O. A. Kuznetsov & V. A. Perevoshchikov

Authors
  1. N. V. Vostokov
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  2. Yu. N. Drozdov
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  3. Z. F. Krasil’nik
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  4. O. A. Kuznetsov
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  5. A. V. Novikov
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  6. V. A. Perevoshchikov
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  7. M. V. Shaleev
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Translated from Fizika Tverdogo Tela, Vol. 47, No. 1, 2005, pp. 44–46.

Original Russian Text Copyright © 2005 by Vostokov, Drozdov, Krasil’nik, Kuznetsov, Novikov, Perevoshchikov, Shaleev.

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Vostokov, N.V., Drozdov, Y.N., Krasil’nik, Z.F. et al. Si1−x Gex/Si(001) relaxed buffer layers grown by chemical vapor deposition at atmospheric pressure. Phys. Solid State 47, 42–45 (2005). https://doi.org/10.1134/1.1853441

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  • DOI: https://doi.org/10.1134/1.1853441

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