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Photoconductivity of Si/Ge/SiOx and Si/Ge/Si structures with germanium quantum dots

  • Proceedings of the Conference “Nanophotonics 2004” (Nizhni Novgorod, Russia, May 2–6, 2004)
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Abstract

A nonmonotonic dependence of the lateral photoconductivity (PC) on the interband light intensity is observed in Si/Ge/Si and Si/Ge/SiOx structures with self-organized germanium quantum dots (QDs): in addition to a stepped increase in PC, a stepped decrease in PC is also observed. The effect of temperature and drive field on these features of the PC for both types of structures with a maximum nominal thickness of the Ge layer (N Ge) is studied. The results obtained are discussed in the context of percolation theory for nonequilibrium carriers localized in different regions of the structure: electrons in the silicon matrix and holes in QDs.

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Authors and Affiliations

  1. Joint Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Lavrent’eva 13, Novosibirsk, 630090, Russia

    O. A. Shegai, A. Yu. Berezovsky, A. I. Nikiforov & V. V. Ul’yanov

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  1. O. A. Shegai
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  2. A. Yu. Berezovsky
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  3. A. I. Nikiforov
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  4. V. V. Ul’yanov
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__________

Translated from Fizika Tverdogo Tela, Vol. 47, No. 1, 2005, pp. 33–36.

Original Russian Text Copyright © 2005 by Shegai, Berezovsky, Nikiforov, Ul’yanov.

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Shegai, O.A., Berezovsky, A.Y., Nikiforov, A.I. et al. Photoconductivity of Si/Ge/SiOx and Si/Ge/Si structures with germanium quantum dots. Phys. Solid State 47, 30–33 (2005). https://doi.org/10.1134/1.1853438

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  • DOI: https://doi.org/10.1134/1.1853438

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