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Effect of coalescence and of the character of the initial oxide on the photoluminescence of ion-synthesized Si nanocrystals in SiO2

  • Proceedings of the Conference “Nanophotonics 2004” (Nizhni Novgorod, Russia, May 2–6, 2004)
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Abstract

The photoluminescence intensity (PLI) related to Si nanocrystals in a SiO2: nc-Si system synthesized by ion implantation is studied experimentally and theoretically as a function of the Si+ ion dose at various annealing temperatures T ann (1000–1200°C). The dose corresponding to the maximum PLI is found to decrease with increasing T ann. These data are explained in terms of a model taking into account the coalescence of neighboring nanocrystals and the dependence of the probability of radiative recombination of quantum dots on their size. It is found that, when silicon oxide is grown in a wet atmosphere, the photoluminescence spectrum contains an additional band (near 850 nm), which is related to shells around the nanocrystals. This band weakens abrupily after high-temperature annealing in an oxidizing atmosphere (air).

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Authors and Affiliations

  1. Physico-Technical Research Institute, Nizhni Novgorod State University, pr. Gagarina 23/3, Nizhni Novgorod, 603950, Russia

    D. I. Tetelbaum, O. N. Gorshkov, A. P. Kasatkin, A. N. Mikhaylov & A. I. Belov

  2. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia

    D. M. Gaponova & S. V. Morozov

Authors
  1. D. I. Tetelbaum
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  2. O. N. Gorshkov
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  3. A. P. Kasatkin
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  4. A. N. Mikhaylov
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  5. A. I. Belov
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  6. D. M. Gaponova
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  7. S. V. Morozov
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__________

Translated from Fizika Tverdogo Tela, Vol. 47, No. 1, 2005, pp. 17–21.

Original Russian Text Copyright © 2005 by Tetelbaum, Gorshkov, Kasatkin, Mikhaylov, Belov, Gaponova, Morozov.

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Tetelbaum, D.I., Gorshkov, O.N., Kasatkin, A.P. et al. Effect of coalescence and of the character of the initial oxide on the photoluminescence of ion-synthesized Si nanocrystals in SiO2 . Phys. Solid State 47, 13–17 (2005). https://doi.org/10.1134/1.1853434

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