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Photoluminescence of GaAsP/GaInAsP Type-II heterojunctions

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Abstract

We have studied the photoluminescence of heterostructures based on solid solution systems of the GaInP/GaAsP/GaInAsP type grown by metalorganic chemical vapor deposition method. It is established that GaAs0.77P0.23 and Ga0.74In0.26As0.53P0.47 solid solutions form a type-II heterojunction. The conduction band offset at the GaAs0.77P0.23/Ga0.74In0.26As0.53P0.47 heteroboundary amounts to 90 meV, which makes the quaternary solid solution a preferred material for the active region of a laser heterostructure operating at λ=780 nm.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    D. A. Vinokurov, S. A. Zorina, V. A. Kapitonov, A. V. Murashova, D. N. Nikolaev, A. L. Stankevich, M. K. Trukan, V. V. Shamakhov & I. S. Tarasov

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  1. D. A. Vinokurov
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  2. S. A. Zorina
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  3. V. A. Kapitonov
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  4. A. V. Murashova
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  5. D. N. Nikolaev
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  6. A. L. Stankevich
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  7. M. K. Trukan
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  8. V. V. Shamakhov
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  9. I. S. Tarasov
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 30, No. 24, 2004, pp. 31–37.

Original Russian Text Copyright © 2004 by Vinokurov, Zorina, Kapitonov, Murashova, Nikolaev, Stankevich, Trukan, Shamakhov, Tarasov.

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Vinokurov, D.A., Zorina, S.A., Kapitonov, V.A. et al. Photoluminescence of GaAsP/GaInAsP Type-II heterojunctions. Tech. Phys. Lett. 30, 1033–1035 (2004). https://doi.org/10.1134/1.1846849

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