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Simultaneous interface and interband lasing in InAs/InAsSbP heterostructures grown by metalorganic vapor phase epitaxy

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Abstract

Coherent radiation sources have been manufactured based on double heterostructures of the InAs/InAsSbP type grown by metalorganic vapor-phase epitaxy. The mode composition of the lasing spectrum is determined by simultaneous induced recombination at the heteroboundary and in the bulk of the active region, as well as nongenerated modes with intermediate frequencies. Additional optical losses at the intermediate modes decrease the slope of the laser intensity dependence on the current.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    A. P. Astakhova, N. D. Il’inskaya, A. N. Imenkov, S. S. Kizhaev, S. S. Molchanov & Yu. P. Yakovlev

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  1. A. P. Astakhova
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  2. N. D. Il’inskaya
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  3. A. N. Imenkov
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  4. S. S. Kizhaev
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  5. S. S. Molchanov
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  6. Yu. P. Yakovlev
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__________

Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 30, No. 24, 2004, pp. 26–30.

Original Russian Text Copyright © 2004 by Astakhova, Il’inskaya, Imenkov, Kizhaev, Molchanov, Yakovlev.

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Astakhova, A.P., Il’inskaya, N.D., Imenkov, A.N. et al. Simultaneous interface and interband lasing in InAs/InAsSbP heterostructures grown by metalorganic vapor phase epitaxy. Tech. Phys. Lett. 30, 1030–1032 (2004). https://doi.org/10.1134/1.1846848

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  • DOI: https://doi.org/10.1134/1.1846848

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