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Heterogeneous charge transfer due to resonance contact photoionization

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Abstract

A qualitative model of heterogeneous charge transfer between atoms in polycrystalline films or semiconductor-insulator structures resonantly interacting with radiation and the metallic surface of the contact is suggested. The probability of resonance contact photoionization in heterogeneous solid-state nanostructures is determined, which makes it possible to use this process for data transfer and measuring the amount of information in nanotechnology.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia

    B. P. Kashnikov

  2. International Institute of Nonlinear Investigations, Siberian Division, Russian Academy of Sciences, Novosibirsk, 630090, Russia

    V. V. Makarov, E. V. Makarov & G. I. Smirnov

Authors
  1. B. P. Kashnikov
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  2. V. V. Makarov
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  3. E. V. Makarov
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  4. G. I. Smirnov
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__________

Translated from Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 74, No. 12, 2004, pp. 101–104.

Original Russian Text Copyright © 2004 by Kashnikov, V. Makarov, E. Makarov, Smirnov.

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Kashnikov, B.P., Makarov, V.V., Makarov, E.V. et al. Heterogeneous charge transfer due to resonance contact photoionization. Tech. Phys. 49, 1638–1641 (2004). https://doi.org/10.1134/1.1841419

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  • DOI: https://doi.org/10.1134/1.1841419

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