Abstract
SiC films on glass substrates are found to have an amorphous structure, high insulating properties, and good mechanical strength. The integrated transmission coefficient of the SiC films in the spectral range λ=0.4–0.7 µm depends on their thickness. The SiC films subjected to etching in hydrofluoric acid exhibit self-conjugate perforation.
References
Y. Tawada, K. Tsuge, and M. Kondo, Appl. Phys. 53, 5273 (1982).
V. I. Vaganov, Integrated Strain Gages (Énergoatomizdat, Moscow, 1983) [in Russian].
Yonezawa Toshio, Ajima Takashi, and Uchida Masato, US Patent No. 4,224,636 (1980).
N. I. Dolotov, V. A. Karachinov, Yu. M. Tairov, et al., Kristallografiya 32, 526 (1987) [Sov. Phys. Crystallogr. 32, 308 (1987)].
P. A. Ivanov and V. E. Chelnokov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 29, 1921 (1995) [Semiconductors 29, 1003 (1995)].
A. N. Komov, V. I. Chepurnov, and T. P. Fridman, in Proceedings of the 3rd International Workshop “Silicon Carbide and Related Materials”, Novgorod, 2000 (Novg. Gos. Univ., Novgorod, 2000), pp. 108–109.
A. V. Korlyakov, V. V. Luchinin, and N. V. Nikitin, in Proceedings of the 3rd International Workshop “Silicon Carbide and Related Materials,” Novgorod, 2000 (Novg. Gos. Univ., Novgorod, 2000), pp. 111–112.
A. V. Korlyakov, S. V. Kostromin, M. M. Kosyreva, et al., Opt. Zh. 68(12), 109 (2001).
A. V. Korlyakov, V. V. Luchinin, and P. P. Mal’tsev, Mikroelektronika, No. 3, 201 (1999).
Yu. A. Tkhorik and L. S. Khazan, Plastic Strain and Misfit Dislocations in Heteroepitaxial Systems (Naukova Dumka, Kiev, 1983) [in Russian].
E. E. Violin, K. D. Demakov, A. A. Kal’nin, et al., Fiz. Tverd. Tela (Leningrad) 26, 1575 (1984) [Sov. Phys. Solid State 26, 960 (1984)].
R. S. Sussman and R. Ogden, Philos. Mag. B 44, 137 (1981).
G. V. Samsonov and I. M. Vinitskii, Refractory Compounds (Metallurgiya, Moscow, 1976) [in Russian].
B. D. Luft, Physicochemical Treatment of Semiconductors Surfaces (Radio i Svyaz’, Moscow, 1982) [in Russian].
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Translated from Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 74, No. 12, 2004, pp. 96–97.
Original Russian Text Copyright © 2004 by V. Karachinov, Toritsyn, D. Karachinov.
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Karachinov, V.A., Toritsyn, S.B. & Karachinov, D.V. Effect of self-conjugate perforation in amorphous silicon carbide layers. Tech. Phys. 49, 1633–1634 (2004). https://doi.org/10.1134/1.1841417
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DOI: https://doi.org/10.1134/1.1841417