Abstract
It is found that single crystals of silicon carbide exposed to soft X rays exhibit luminescence in the visible spectral range. The luminescence intensity from the single crystals produced by different methods differs by three-to fivefold. Also, the emission intensity is nonuniformly distributed over the single crystal surface, which may be related to the nonuniform distribution of impurities (activators).
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References
V. V. Antonov-Romanovskii, The Kinetics of Photoluminescence in Crystal Phosphors (Nauka, Moscow, 1966) [in Russian].
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Translated from Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 74, No. 12, 2004, pp. 94–95.
Original Russian Text Copyright © 2004 by G. Babayants, K. Babayants, Popenko.
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Babayants, G.I., Babayants, K.G. & Popenko, V.A. Roentgenoluminescence from silicon carbide. Tech. Phys. 49, 1631–1632 (2004). https://doi.org/10.1134/1.1841416
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DOI: https://doi.org/10.1134/1.1841416