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Electron spin orientation under optically stimulated radiative recombination

  • Semiconductors and Dielectrics
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Abstract

Optical spin orientation of electrons (holes) in radiative transitions stimulated by circularly polarized photons is considered. It is shown that this effect can be used to advantage in developing an optical generator of spin-polarized carriers operating on a principle similar to that of a semiconductor laser.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    A. I. Grachev

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  1. A. I. Grachev
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__________

Translated from Fizika Tverdogo Tela, Vol. 46, No. 12, 2004, pp. 2124–2128.

Original Russian Text Copyright © 2004 by Grachev.

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Grachev, A.I. Electron spin orientation under optically stimulated radiative recombination. Phys. Solid State 46, 2196–2200 (2004). https://doi.org/10.1134/1.1841379

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  • DOI: https://doi.org/10.1134/1.1841379

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