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On the possibility of transverse size oscillations in a domain with a high free-electron concentration under the action of a short light pulse on a semiconductor

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Abstract

Computer simulation is used to demonstrate the possibility of transverse size oscillations in a domain with a high concentration of free electrons under the action of a light pulse on a nonlinearly absorbing semiconductor. The results of computer simulation are confirmed analytically by testing the system stability.

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Authors and Affiliations

  1. Moscow State University, Vorob’evy gory, Moscow, 119992, Russia

    M. M. Loginova & V. A. Trofimov

Authors
  1. M. M. Loginova
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  2. V. A. Trofimov
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Translated from Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 74, No. 11, 2004, pp. 123–126.

Original Russian Text Copyright © 2004 by Loginova, Trofimov.

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Loginova, M.M., Trofimov, V.A. On the possibility of transverse size oscillations in a domain with a high free-electron concentration under the action of a short light pulse on a semiconductor. Tech. Phys. 49, 1517–1520 (2004). https://doi.org/10.1134/1.1826203

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  • DOI: https://doi.org/10.1134/1.1826203

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