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Nonlinear mid-IR radiation in two-frequency semiconductor lasers with a corrugated waveguide

  • Optics, Quantum Electronics
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Abstract

The nonlinear generation of a difference frequency mode in an injection quantum-well semiconductor laser is considered. A laser based on the InGaAs/GaAs/InGaP heterostructure is proposed, which generates two modes in the 1-µm range and the difference mode in a corrugated waveguide in the range from 10 to 20 µm. It is shown that the power of the difference mode produced by a laser with a 100-µm-wide waveguide in the mid-IR range at room temperature can be as high as a few microwatts if the power of the short-wave modes is 10 W.

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Authors and Affiliations

  1. Institute of Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia

    V. Ya. Aleshkin & A. A. Dubinov

  2. Belarussian State University, Minsk, 220050, Belarus

    A. A. Afonenko

Authors
  1. V. Ya. Aleshkin
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  2. A. A. Afonenko
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  3. A. A. Dubinov
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__________

Translated from Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 74, No. 11, 2004, pp. 92–96.

Original Russian Text Copyright © 2004 by Aleshkin, Afonenko, Dubinov.

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Aleshkin, V.Y., Afonenko, A.A. & Dubinov, A.A. Nonlinear mid-IR radiation in two-frequency semiconductor lasers with a corrugated waveguide. Tech. Phys. 49, 1486–1490 (2004). https://doi.org/10.1134/1.1826195

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  • DOI: https://doi.org/10.1134/1.1826195

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