Abstract
We report observation of the unexpected negative and nonmonotonic magnetoresistance of 2D electrons in Si-MOSFET subjected to a varying in-plane magnetic field superimposed on a constant perpendicular field component. We show that this nonmonotonic magnetoresistance is irrelevant to the energy spectrum of mobile 2D electrons. We also observed variations of the density of mobile electrons with the in-plane field. We argue that both variations of the negative magnetoresistance and of the density of mobile electrons originate from the band of localized states. The latter coexist and interact with mobile electrons even at relatively high density, a factor of 1.5 higher than the critical density of the apparent metal-insulator transition.
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From Pis’ma v Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 80, No. 5, 2004, pp. 408–411.
Original English Text Copyright © 2004 by Pudalov, Kirichenko, Klimov, Gershenson, Kojima.
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Pudalov, V.M., Kirichenko, A.S., Klimov, N.N. et al. Unexpected negative nonmonotonic magnetoresistance of the two-dimensional electrons in Si in a parallel magnetic field. Jetp Lett. 80, 359–362 (2004). https://doi.org/10.1134/1.1825123
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DOI: https://doi.org/10.1134/1.1825123