Abstract
The effect of uniaxial compression on the behavior of shallow aluminum acceptor centers in silicon has been studied. The μAl impurity atoms were created by implanting negative muons into silicon single crystals doped with phosphorus to 1.6×1013 cm−3 (sample 1) and 1.9×1013 cm−3 (sample 2). The muon polarization was studied in the temperature range 10–300 K. Measurements were performed in a magnetic field of 2.5 kG oriented perpendicularly to the muon spin. The samples were oriented so that the selected crystal axis ([111] and [100] in samples 1 and 2, respectively), the magnetic field, and the initial muon-spin polarization were mutually perpendicular. External pressure applied to the sample along the indicated crystal axis changed both the absolute value of the acceptor magnetic-moment relaxation rate and the character of its temperature dependence.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
T. N. Mamedov, I. L. Chaplygin, V. N. Duginov, et al., J. Phys.: Condens. Matter 11, 2849 (1999).
T. N. Mamedov, A. V. Stoikov, and V. N. Gorelkin, Fiz. Élem. Chastits At. Yadra 33, 1005 (2002) [Phys. Part. Nucl. 33, 519 (2002)].
T. N. Mamedov, D. Herlach, V. N. Gorelkin, et al., Physica B (Amsterdam) 326, 97 (2003).
T. N. Mamedov, D. G. Andrianov, D. Herlach, et al., Pis’ma Zh. Éksp. Teor. Fiz. 79, 25 (2004) [JETP Lett. 79, 21 (2004)].
T. N. Mamedov, D. Andreica, D. G. Andrianov, et al., PSI Sci. Rep. ILL, 115 (2002).
T. N. Mamedov, D. Andreica, D. G. Andrianov, et al., PSI Sci. Rep. ILL, 123 (2003).
Belita Koiller, Xuedong Hu, and S. Das Sarma, Phys. Rev. B 66, 115201 (2002).
B. Golding and M. I. Dykman, cond-mat/0309147 (2003).
G. L. Bir and G. E. Pikus, Symmetry and Strain-Induced Effects in Semiconductors (Nauka, Moscow, 1972; Wiley, New York, 1975).
G. Feher, J. C. Hensel, and E. A. Gere, Phys. Rev. Lett. 5, 309 (1960).
G. W. Ludwig and H. H. Woodbury, Bull. Am. Phys. Soc. 1, 118 (1961).
R. Abela, C. Baines, X. Donath, et al., Hyperfine Interact. 87, 1105 (1994).
A. Baturin and V. N. Gorelkin, in Proceedings of XXXVII School of St. Petersburg Institute of Nuclear Physics (in press).
V. N. Gorelkin, T. N. Mamedov, and A. S. Baturin, Physica B (Amsterdam) 289–290, 585 (2000).
H. Neubrand, Phys. Status Solidi B 86, 269 (1978).
Author information
Authors and Affiliations
Additional information
__________
Translated from Pis’ma v Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 80, No. 5, 2004, pp. 385–388.
Original Russian Text Copyright © 2004 by Mamedov, Andreica, Andrianov, Herlach, Gorelkin, Gritsai, Zhukov, Stoikov, Zimmermann.
Rights and permissions
About this article
Cite this article
Mamedov, T.N., Andreica, D., Andrianov, D.G. et al. The effect of uniaxial static pressure on the behavior of an aluminum acceptor impurity in silicon. Jetp Lett. 80, 339–342 (2004). https://doi.org/10.1134/1.1825118
Received:
Issue Date:
DOI: https://doi.org/10.1134/1.1825118