Abstract
Reversible softening of silicon single crystals under β irradiation with low doses (D<1 cGy) is revealed. The peaks observed in the dependence of the microhardness of silicon on the fluence are explained by the multistage competing processes of transformations of radiation-induced defects.
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Translated from Fizika Tverdogo Tela, Vol. 46, No. 10, 2004, pp. 1790–1792.
Original Russian Text Copyright © 2004 by Golovin, Dmitrievski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Pushnin, Suchkova.
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Golovin, Y.I., Dmitrievskii, A.A., Pushnin, I.A. et al. Reversible changes in the microhardness of silicon crystals under electron irradiation with low doses. Phys. Solid State 46, 1851–1853 (2004). https://doi.org/10.1134/1.1809418
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DOI: https://doi.org/10.1134/1.1809418