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Experimental determination of the constants of absolute volume deformation potentials at band edges in semiconductors

  • Semiconductors and Dielectrics
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Abstract

A method is proposed for determining the constants of absolute volume deformation potentials at edges of the conduction and valence bands in semiconductors. This method is based on (i) the volume-concentration effect, (ii) the concept that the energy of deep-lying strongly localized impurity centers does not depend on the hydrostatic pressure, and (iii) the use of experimental data on the electrical resistivity and Hall coefficient. For Ge, GaAs, InAs, and InSb semiconductors, the constants of absolute volume deformation potentials at edges of the conduction and valence bands are determined from our results and data available in the literature.

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Authors and Affiliations

  1. Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences, ul. 26 Bakinskikh Komissarov 94, Makhachkala, 367003, Dagestan, Russia

    M. I. Daunov, I. K. Kamilov & S. F. Gabibov

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  1. M. I. Daunov
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  2. I. K. Kamilov
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  3. S. F. Gabibov
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__________

Translated from Fizika Tverdogo Tela, Vol. 46, No. 10, 2004, pp. 1766–1769.

Original Russian Text Copyright © 2004 by Daunov, Kamilov, Gabibov.

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Daunov, M.I., Kamilov, I.K. & Gabibov, S.F. Experimental determination of the constants of absolute volume deformation potentials at band edges in semiconductors. Phys. Solid State 46, 1825–1829 (2004). https://doi.org/10.1134/1.1809413

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