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Lasing wavelength of quantum dot heterostructures controlled within the 1.3–0.85 μm range by means of high-temperature annealing

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Abstract

We have studied the effect of high-temperature annealing on the properties of a laser heterostructure with InAs quantum dots in AlAs/GaAs superlattice. By increasing the time of annealing at 700°C, it is possible to provide for a smooth variation of the lasing wavelength from 1290 to 916 nm at a constant threshold current density (250 A/cm2 at T 0=110 K). By annealing the structure at 750°C, the lasing wavelength can be reduced to 845 nm.

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References

  1. V. M. Ustinov, A. E. Zhukov, A. Yu. Egorov, and N. A. Maleev, Quantum Dot Lasers, in Oxford Science Publications, Series on Semiconductor Science and Technology (Oxford Univ. Press, Oxford, 2003), Vol. 11.

    Google Scholar 

  2. S. S. Mikhrin, A. E. Zhukov, A. R. Kovsh, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 36, 1400 (2002) [Semiconductors 36, 1315 (2002)].

    Google Scholar 

  3. A. E. Zhukov, A. P. Vasil’ev, A. R. Kovsh, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 37, 1461 (2003) [Semiconductors 37, 1411 (2003)].

    Google Scholar 

  4. A. O. Kosogov, P. Werner, U. Gösele, et al., Appl. Phys. Lett. 69, 3072 (1996).

    Article  ADS  Google Scholar 

  5. A. E. Zhukov, A. Yu. Egorov, A. R. Kovsh, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 31, 105 (1997) [Semiconductors 31, 84 (1997)].

    Google Scholar 

  6. M. V. Maximov, A. F. Tsatsul’nikov, B. V. Volovik, et al., Phys. Rev. B 62, 16671 (2000).

    Google Scholar 

  7. A. E. Zhukov, V. M. Ustinov, and Zh. I. Alferov, in Selected Topics in Electronics and Systems, Vol. 16: Advances in Semiconductor Lasers and Applications to Optoelectronics, Ed. by M. Dutta and M. A. Stroscio (World Scientific, Singapore, 2000), pp. 263–292.

    Google Scholar 

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    E. V. Nikitina, A. E. Zhukov, A. P. Vasil’ev, E. S. Semenova, A. G. Gladyshev, N. V. Kryzhanovskaya, M. V. Maksimov, Yu. M. Shernyakov, V. M. Ustinov & N. N. Ledentsov

Authors
  1. E. V. Nikitina
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  2. A. E. Zhukov
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  3. A. P. Vasil’ev
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  4. E. S. Semenova
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  5. A. G. Gladyshev
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  6. N. V. Kryzhanovskaya
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  7. M. V. Maksimov
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  8. Yu. M. Shernyakov
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  9. V. M. Ustinov
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  10. N. N. Ledentsov
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Additional information

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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 30, No. 15, 2004, pp. 55–61.

Original Russian Text Copyright © 2004 by Nikitina, Zhukov, Vasil’ev, Semenova, Gladyshev, Kryzhanovskaya, Maksimov, Shernyakov, Ustinov, Ledentsov.

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Nikitina, E.V., Zhukov, A.E., Vasil’ev, A.P. et al. Lasing wavelength of quantum dot heterostructures controlled within the 1.3–0.85 μm range by means of high-temperature annealing. Tech. Phys. Lett. 30, 644–646 (2004). https://doi.org/10.1134/1.1792300

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  • DOI: https://doi.org/10.1134/1.1792300

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