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Initial stages of the MBE growth of silicon carbide nanoclusters on a silicon substrate

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Abstract

The growth of silicon carbide (SiC) nanoclusters by molecular beam epitaxy on silicon substrates has been studied using a combination of experimental and theoretical methods. The first results concerning the initial stages of this growth are presented.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    Yu. V. Trushin, E. E. Zhurkin, K. L. Safonov, A. A. Schmidt, V. S. Kharlamov, S. A. Korolev, M. N. Lubov & J. Pezoldt

  2. St. Petersburg State Technical University, St. Petersburg, 195251, Russia

    Yu. V. Trushin, E. E. Zhurkin, K. L. Safonov, A. A. Schmidt, V. S. Kharlamov, S. A. Korolev, M. N. Lubov & J. Pezoldt

  3. Zentrum für Mikro-und Nanotechnologien, TU Ilmenau, Postfach 100565, 98684, Ilmenau, Germany

    Yu. V. Trushin, E. E. Zhurkin, K. L. Safonov, A. A. Schmidt, V. S. Kharlamov, S. A. Korolev, M. N. Lubov & J. Pezoldt

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  1. Yu. V. Trushin
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  2. E. E. Zhurkin
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  3. K. L. Safonov
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  4. A. A. Schmidt
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  5. V. S. Kharlamov
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  6. S. A. Korolev
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  7. M. N. Lubov
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  8. J. Pezoldt
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 30, No. 15, 2004, pp. 48–54.

Original Russian Text Copyright © 2004 by Trushin, Zhurkin, Safonov, Schmidt, Kharlamov, Korolev, Lubov, Pezoldt.

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Trushin, Y.V., Zhurkin, E.E., Safonov, K.L. et al. Initial stages of the MBE growth of silicon carbide nanoclusters on a silicon substrate. Tech. Phys. Lett. 30, 641–643 (2004). https://doi.org/10.1134/1.1792299

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