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Oxidation kinetics of thin titanium films grown on tungsten

  • Low-Dimensional Systems and Surface Physics
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Abstract

Growth of thin Ti films on (100)W and the kinetics of their oxidation are studied using thermal-desorption spectroscopy and Auger electron spectroscopy. Titanium films grow nearly layer by layer on the (100)W face at room temperature. The activation energy for desorption of Ti atoms decreases from 5.2 eV for coverage θ=0.1 to 4.9 eV in a multilayer film. Oxidation of a thin (θ=6) titanium film starts with dissolution of oxygen atoms in its bulk to the limiting concentration for a given temperature, after which the film oxidizes to TiO, with the TiO2 oxide starting to grow when exposure of the film to oxygen is prolonged. The thermal desorption of oxides follows zero-order kinetics and is characterized by desorption activation energies of 5.1 (TiO) and 5.9 eV (TiO2).

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    V. N. Ageev, E. Yu. Afanas’eva & N. D. Potekhina

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  1. V. N. Ageev
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  2. E. Yu. Afanas’eva
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  3. N. D. Potekhina
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__________

Translated from Fizika Tverdogo Tela, Vol. 46, No. 8, 2004, pp. 1498–1503.

Original Russian Text Copyright © 2004 by Ageev, Afanas’eva, Potekhina.

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Ageev, V.N., Afanas’eva, E.Y. & Potekhina, N.D. Oxidation kinetics of thin titanium films grown on tungsten. Phys. Solid State 46, 1542–1547 (2004). https://doi.org/10.1134/1.1788792

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