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Phonon drag thermopower in doped bismuth

  • Semiconductors and Dielectrics
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Abstract

The low-temperature (2<T<80 K) thermopower in bismuth doped by tellurium, a donor impurity (0<c≤0.07 at. % Te), is dominated by the phonon component, which shifts to higher temperatures with increasing dopant concentration. The temperature and concentration dependences of the phonon thermopower of doped bismuth are satisfactorily described by the theory of phonon drag of electrons. The theory is developed for a strongly anisotropic electron spectrum and includes both direct and two-step phonon drag.

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Translated from Fizika Tverdogo Tela, Vol. 46, No. 8, 2004, pp. 1372–1380.

Original Russian Text Copyright © 2004 by Kagan, Red’ko, Rodionov, Pol’shin, Zotova.

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Kagan, V.D., Red’ko, N.A., Rodionov, N.A. et al. Phonon drag thermopower in doped bismuth. Phys. Solid State 46, 1410–1419 (2004). https://doi.org/10.1134/1.1788771

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  • DOI: https://doi.org/10.1134/1.1788771

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