Abstract
We demonstrate the possibility of melting thin (0.1–0.5 µm) InSb films directly in atmosphere under the protective layer of native oxides to obtain high mobility of majority carriers (up to 25 000 cm2/V s). The features of the film synthesis process based on thermal pulsed evaporation of InSb powder in vacuum are studied experimentally. Such a technique makes it possible to provide necessary compositional inhomogeneity of the deposited film for subsequent melting in air.
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Translated from Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 74, No. 8, 2004, pp. 113–115.
Original Russian Text Copyright © 2004 by Gulyaev, A.A. Veselov, A.G. Veselov, Burylin, Dzhumaliev, Zyuryukin, Kiryasova, Ryabushkin.
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Gulyaev, Y.V., Veselov, A.A., Veselov, A.G. et al. Effect of surface composition on melting of thin InSb films. Tech. Phys. 49, 1068–1070 (2004). https://doi.org/10.1134/1.1787670
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DOI: https://doi.org/10.1134/1.1787670