Abstract
Experimental data are obtained on the dynamics of conduction-electron relaxation at the stage preceding the melting of a silicon surface layer. The energy of a quantum of probe radiation is smaller than the band gap, making it possible to obtain information about the electron-phonon relaxation processes for an electron concentration of ∼ 1021 cm−3 in the conduction band.
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Translated from Pis’ma v Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 79, No. 11, 2004, pp. 657–659.
Original Russian Text Copyright © 2004 by Ashitkov, Ovchinnikov, Agranat.
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Ashitkov, S.I., Ovchinnikov, A.V. & Agranat, M.B. Recombination of an electron-hole plasma in silicon under the action of femtosecond laser pulses. Jetp Lett. 79, 529–531 (2004). https://doi.org/10.1134/1.1787099
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DOI: https://doi.org/10.1134/1.1787099