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Impurity absorption of light involving resonant states of shallow donors in quantum wells

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Abstract

The energy spectrum of localized and resonant states of shallow donors in heterostructures GaAs/AlxGa1−x As with quantum wells is calculated. The widths of the resonant states belonging to the second size quantization subband are determined. It is shown that the width of a resonance level is mainly determined by the interaction with optical phonons. The spectrum of impurity absorption of light due to electron transitions from the ground state of the donor to the resonant states belonging to the second size quantization subband is calculated.

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Authors and Affiliations

  1. Institute of Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia

    V. Ya. Aleshkin & L. V. Gavrilenko

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  1. V. Ya. Aleshkin
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  2. L. V. Gavrilenko
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Translated from Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Fiziki, Vol. 125, No. 6, 2004, pp. 1340–1348.

Original Russian Text Copyright © 2004 by Aleshkin, Gavrilenko.

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Aleshkin, V.Y., Gavrilenko, L.V. Impurity absorption of light involving resonant states of shallow donors in quantum wells. J. Exp. Theor. Phys. 98, 1174–1182 (2004). https://doi.org/10.1134/1.1777630

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  • DOI: https://doi.org/10.1134/1.1777630

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