Skip to main content
SpringerLink
Log in

Modification of the shape of large germanium nanoislands on silicon surface by low-energy ion bombardment

  • Published:
Technical Physics Letters Aims and scope Submit manuscript

Abstract

Germanium nanoislands on silicon substrates were irradiated by hydrogen and argon ions with energies below 350 eV. In the initial stage, ion bombardment leads to the division of large islands into several small islands irrespective of the ion type. The resulting surface is more homogeneous than the initial and is stable with respect to further ion irradiation.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. N. N. Ledentsov, V. M. Ustinov, V. A. Shchukin, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 32, 385 (1998) [Semiconductors 32, 343 (1998)].

    Google Scholar 

  2. K. Alchalabi, D. Zimin, G. Kostoroz, and H. Zogg, Phys. Rev. Lett. 90, 026104 (2003).

    Google Scholar 

  3. G. Medeiros-Ribeiro, A. M. Bratkovski, T. I. Kamins, et al., Science 279, 353 (1998).

    Article  ADS  Google Scholar 

  4. O. Leifeld, R. Hartmann, E. Müller, et al., Nanotechnology, No. 10, 122 (1999).

  5. O. G. Schmidt, C. Lange, K. Ebert, et al., Appl. Phys. Lett. 71, 2340 (1997).

    ADS  Google Scholar 

  6. A. I. Stognij, N. N. Novitskii, and O. M. Stukalov, Pis’ma Zh. Tekh. Fiz. 29(2), 6 (2003) [Tech. Phys. Lett. 29, 43 (2003)].

    Google Scholar 

  7. A. I. Stognij and S. V. Koryakin, Prib. Tekh. Éksp., No. 6, 64 (2000).

  8. V. S. Smentkowski, Prog. Surf. Sci. 64, 1 (2000).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Research Institute of Radio Materials, Minsk, Belarus

    A. I. Stognij, N. N. Novitskii, O. M. Stukalov, A. I. Demchenko & V. I. Khit’ko

  2. Institute of Solid State and Semiconductor Physics, National Academy of Sciences of Belarus, Minsk, Belarus

    A. I. Stognij, N. N. Novitskii, O. M. Stukalov, A. I. Demchenko & V. I. Khit’ko

Authors
  1. A. I. Stognij
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. N. N. Novitskii
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. O. M. Stukalov
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. A. I. Demchenko
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. V. I. Khit’ko
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

__________

Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 30, No. 10, 2004, pp. 66–70.

Original Russian Text Copyright © 2004 by Stognij, Novitskii, Stukalov, Demchenko, Khit’ko.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Stognij, A.I., Novitskii, N.N., Stukalov, O.M. et al. Modification of the shape of large germanium nanoislands on silicon surface by low-energy ion bombardment. Tech. Phys. Lett. 30, 429–431 (2004). https://doi.org/10.1134/1.1760876

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1134/1.1760876

Keywords

Search

Navigation