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Surface barrier Sn-CuInSe2 junctions

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Abstract

Photosensitive Schottky barriers were obtained by thermal deposition of tin onto p-type CuInSe2 crystals. The temperature variation of the current-voltage characteristics of these structures is considered. For a direct bias voltage, both space-charge-limited current and thermoelectron emission components are present. Reverse biased structures are characterized by current generation in the space charge region and exhibit soft breakdown. The spectral dependence of a photocurrent (reduced to the incident photon number) shows that the obtained structures behave as wideband photoconverters.

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Authors and Affiliations

  1. Frantsevich Institute for Problems of Materials Science (Chernivtsy Department), National Academy of Sciences of Ukraine, Chernivtsy, Ukraine

    Z. D. Kovalyuk, V. B. Orletskii, O. N. Sydor & V. V. Netyaga

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  1. Z. D. Kovalyuk
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  2. V. B. Orletskii
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  3. O. N. Sydor
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  4. V. V. Netyaga
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 30, No. 10, 2004, pp. 12–16.

Original Russian Text Copyright © 2004 by Kovalyuk, Orletski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Sydor, Netyaga.

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Kovalyuk, Z.D., Orletskii, V.B., Sydor, O.N. et al. Surface barrier Sn-CuInSe2 junctions. Tech. Phys. Lett. 30, 402–403 (2004). https://doi.org/10.1134/1.1760868

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  • DOI: https://doi.org/10.1134/1.1760868

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