Abstract
IR irradiation of electroluminescent emitters based on thin ZnS:Mn films in the pause between excitation voltage pulses produces quenching of the luminescence and leads to a decrease in the emission intensity within the wavelength interval 530–540 nm and an increase within 640–680 nm. These phenomena are explained by the IR-radiation-induced recharge of the deep centers related to the sulfur vacancies V 2+S and V +S , whereby the concentration of the latter centers increases, and redistribution of the channels of impact excitation of Mn2+ and V +S centers in favor of the latter type.
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 30, No. 9, 2004, pp. 88–95.
Original Russian Text Copyright © 2004 by Gurin, Ryabov.
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Gurin, N.T., Ryabov, D.V. Infrared quenching of electroluminescence in ZnS:Mn thin-film emitters. Tech. Phys. Lett. 30, 392–395 (2004). https://doi.org/10.1134/1.1760865
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DOI: https://doi.org/10.1134/1.1760865