Abstract
Electropositive atoms of aluminum adsorbed on a (\({{P_{As_4 } } \mathord{\left/ {\vphantom {{P_{As_4 } } {P_{Ga} }}} \right. \kern-\nulldelimiterspace} {P_{Ga} }} = \gamma \))Re surface exhibit competition with non-metals (Si, C) for the adsorption sites at high temperatures (1200–1500 K). In this system, silicon displaces aluminum, while aluminum displaces carbon. The mechanism of this competition is fully analogous to that observed previously for Si, C, and S atoms on the surface of refractory metals, despite the fact that aluminum atoms (in contrast to the nonmetals) in the adsorbed state possess a positive charge.
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V. N. Ageev, E. Yu. Afanas’eva, N. R. Gall’, et al., Pis’ma Zh. Tekh. Fiz. 12, 565 (1986) [Sov. Tech. Phys. Lett. 12, 231 (1986)].
N. R. Gall, E. V. Rut’kov, A. Ya. Tontegode, and M. M. Usufov, Phys. Low-Dimens. Semicond. Struct. 9, 79 (1994).
N. R. Gall’, E. V. Rut’kov, and A. Ya. Tontegode, Pis’ma Zh. Tekh. Fiz. 26(12), 31 (2000) [Tech. Phys. Lett. 26, 510 (2000)].
N. R. Gall, E. V. Rut’kov, and A. Ya. Tontegode, Thin Solid Films 226, 229 (1995).
N. R. Gall’, E. V. Rut’kov, A. Ya. Tontegode, and M. M. Usufov, Fiz. Tverd. Tela (St. Petersburg) 38, 2541 (1996) [Phys. Solid State 38, 1394 (1996)].
N. R. Gall’, E. V. Rut’kov, A. Ya. Tontegode, and M. M. Usufov, Pis’ma Zh. Tekh. Fiz. 20(18), 65 (1994) [Tech. Phys. Lett. 20, 752 (1994)].
N. R. Gall’, E. V. Rut’kov, and A. Ya. Tontegode, Pis’ma Zh. Tekh. Fiz. 15(7), 52 (1989) [Sov. Tech. Phys. Lett. 15, 269 (1989)].
V. G. Samsonov and I. M. Vinitskii, Handbook of Refractory Compounds (Metallurgiya, Moscow, 1976; Plenum Press, New York, 1980).
M. Parschan and K. Cristmann, Surf. Sci. 347, 63 (1996).
N. R. Gall’, E. V. Rut’kov, and A. Ya. Tontegode, Fiz. Tverd. Tela (St. Petersburg) 44, 1332 (2002) [Phys. Solid State 44, 1394 (2002)].
N. R. Gall’, E. V. Rut’kov, and A. Ya. Tontegode, Zh. Tekh. Fiz. 60(4), 125 (1990) [Sov. Phys. Tech. Phys. 35, 475 (1990)].
N. R. Gall, S. N. Mikhailov, E. V. Rut’kov, and A. Ya. Tontegode, Surf. Sci. 191, 185 (1987).
M. Guttmann and D. McLean, Interfacial Segregation, Ed. by W. C. Johnson and J. M. Blakely (Am. Soc. Metals, Ohio, 1979), pp. 261–347.
H. B. Gray, Electrons and Chemical Bonding (Benjamin, New York, 1964; Mir, Moscow, 1967).
V. S. Fomenko, Emission Properties of Materials: A Handbook (Naukova Dumka, Kiev, 1981) [in Russian].
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Translated from Pis’ma v Zhurnal Tekhnichesko\({{P_{As_4 } } \mathord{\left/ {\vphantom {{P_{As_4 } } {P_{Ga} }}} \right. \kern-\nulldelimiterspace} {P_{Ga} }} = \gamma \) Fiziki, Vol. 30, No. 5, 2004, pp. 46–53.
Original Russian Text Copyright © 2004 by Gall, Rut’kov, Tontegode.
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Gall, N.R., Rut’kov, E.V. & Tontegode, A.Y. The competition between aluminum and group IV (Si, C) atoms on the rhenium surface. Tech. Phys. Lett. 30, 193–196 (2004). https://doi.org/10.1134/1.1707164
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DOI: https://doi.org/10.1134/1.1707164