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Conductance of a multiterminal ballistic wire

  • Condensed Matter
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Abstract

An experimental study of the two-, three-, and four-terminal resistance of a ballistic wire is carried out. The wire is fabricated on the basis of high-mobility 2D electron gas in an AlGaAs/GaAs heterojunction. Different behavior of mesoscopic fluctuations of multiterminal resistances is observed depending on the gate voltage and magnetic field. At B=0.45 T, the four-terminal resistance drops almost to zero and features resembling a ballistic conductance quantization are observed.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, 630090, Russia

    Z. D. Kvon, V. A. Tkachenko & A. E. Plotnikov

  2. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Moscow region, 141190, Russia

    V. A. Sablikov

  3. Grenoble High Magnetic Fields Laboratory, MPI-FKF and CNRS, F-38042, Grenoble, France

    V. Renard & J. C. Portal

Authors
  1. Z. D. Kvon
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  2. V. A. Tkachenko
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  3. A. E. Plotnikov
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  4. V. A. Sablikov
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  5. V. Renard
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  6. J. C. Portal
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Translated from Pis’ma v Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 79, No. 1, 2004, pp. 42–45.

Original Russian Text Copyright © 2004 by Kvon, Tkachenko, Plotnikov, Sablikov, Renard, Portal.

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Kvon, Z.D., Tkachenko, V.A., Plotnikov, A.E. et al. Conductance of a multiterminal ballistic wire. Jetp Lett. 79, 36–39 (2004). https://doi.org/10.1134/1.1675918

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  • DOI: https://doi.org/10.1134/1.1675918

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