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Ionization mechanisms of aluminum acceptor impurity in silicon

  • Atoms, Spectra, Radiations
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Abstract

Processes of ionization of shallow acceptor centers (ACs) in silicon are studied. In crystalline silicon samples with phosphorus (1.6×1013, 2.7×1013, and 2.3×1015cm−3) and boron (1.3×1015cm−3) impurities, μAl impurity atoms were produced by implantation of negative muons. It is found that thermal ionization is the main mechanism for ionizing the Al acceptor impurity in both p-type and n-type silicon with an impurity concentration of ≲1015cm−3 at T>45 K. The thermal ionization rate of Al ACs in Si varies from ∼105 to ∼106s−1 in the temperature range 45–55 K.

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References

  1. T. N. Mamedov, A. V. Stoikov, and V. N. Gorelkin, Fiz. Élem. Chastits At. Yadra 33, 1005 (2002) [Phys. Part. Nucl. 33, 519 (2002)].

    Google Scholar 

  2. T. N. Mamedov, D. Herlach, V. N. Gorelkin, et al., Physica B (Amsterdam) 326, 97 (2003).

    ADS  Google Scholar 

  3. T. N. Mamedov, I. L. Chaplygin, V. N. Duginov, et al., J. Phys.: Condens. Matter 11, 2849 (1999).

    Article  ADS  Google Scholar 

  4. V. N. Gorelkin, T. N. Mamedov, and A. S. Baturin, Physica B (Amsterdam) 289–290, 585 (2000).

    Google Scholar 

  5. G. L. Bir and G. E. Pikus, Symmetry and Strain-Induced Effects in Semiconductors (Nauka, Moscow, 1972; Wiley, New York, 1975).

    Google Scholar 

  6. H. Neubrand, Phys. Status Solidi B 86, 269 (1978).

    Google Scholar 

  7. T. Susuki, D. F. Measday, and J. P. Roalsvig, Phys. Rev. C 35, 2212 (1987).

    ADS  Google Scholar 

  8. T. N. Mamedov, D. G. Andrianov, D. Herlach, et al., Pis’ma Zh. Éksp. Teor. Fiz. 76, 515 (2002) [JETP Lett. 76, 440 (2002)].

    Google Scholar 

  9. A. G. Milnes, Deep Impurities in Semiconductors (Wiley, New York, 1973; Mir, Moscow, 1977).

    Google Scholar 

  10. S. K. Tewksbury, J. Appl. Phys. 53, 3865 (1982).

    Article  ADS  Google Scholar 

  11. Physical Quantities. Handbook, Ed. by I. S. Grigor’ev and E. Z. Meilikhov (Énergoatomizdat, Moscow, 1991).

    Google Scholar 

  12. E. Rosencher, V. Mosser, and G. Vincent, Phys. Rev. B 29, 1135 (1984).

    Article  ADS  Google Scholar 

  13. R. Abela, C. Baines, X. Donath, et al., Hyperfine Interact. 87, 1105 (1994).

    Article  Google Scholar 

  14. V. N. Abakumov, V. I. Perel’, and I. N. Yassievich, Fiz. Tekh. Poluprovodn. (Leningrad) 12, 3 (1978) [Sov. Phys. Semicond. 12, 1 (1978)].

    Google Scholar 

  15. K. V. Shalimova, Physics of Semiconductors (Énergiya, Moscow, 1971).

    Google Scholar 

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Authors and Affiliations

  1. Joint Institute for Nuclear Research, Dubna, Moscow region, 141980, Russia

    T. N. Mamedov & A. V. Stoikov

  2. State Research and Project Institute of Rare-Metal Industry “Giredmet,”, Moscow, 109017, Russia

    D. G. Andrianov

  3. Paul Scherrer Institut, CH-5232, Villigen PSI, Switzerland

    D. Herlach & U. Zimmermann

  4. Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudnyi, Moscow region, 141700, Russia

    V. N. Gorelkin

Authors
  1. T. N. Mamedov
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  2. D. G. Andrianov
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  3. D. Herlach
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  4. V. N. Gorelkin
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  5. A. V. Stoikov
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  6. U. Zimmermann
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Translated from Pis’ma v Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 79, No. 1, 2004, pp. 25–29.

Original Russian Text Copyright © 2004 by Mamedov, Andrianov, Herlach, Gorelkin, Stoikov, Zimmermann.

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Mamedov, T.N., Andrianov, D.G., Herlach, D. et al. Ionization mechanisms of aluminum acceptor impurity in silicon. Jetp Lett. 79, 21–24 (2004). https://doi.org/10.1134/1.1675914

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  • DOI: https://doi.org/10.1134/1.1675914

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