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The interface mechanism of photoluminescence in carbonized porous silicon

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Abstract

The interface mechanism of photoluminescence (PL) in carbonized porous silicon is considered. The model involves processes in a heterojunction between p-Si and p-SiC nanodimensional grains and the interfacial SiOx and SixOyC1−x−y layers, where the radiative annihilation of charge carriers takes place. Irrespective of the size of nanograins, the bandgap width in the interfacial layers remains constant, which accounts for the fixed positions of red (1.8 eV) and blue-green (2.4 eV) PL bands observed in the experiment. The dimensions of nanograins were determined using X-ray diffraction and scanning tunneling microscopy.

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Authors and Affiliations

  1. Ul’yanovsk State University, Ul’yanovsk, Russia

    B. M. Kostishko, Yu. S. Nagornov, S. Ya. Salomatin & Sh. R. Atazhanov

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  1. B. M. Kostishko
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  2. Yu. S. Nagornov
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  3. S. Ya. Salomatin
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  4. Sh. R. Atazhanov
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 30, No. 3, 2004, pp. 7–13.

Original Russian Text Copyright © 2004 by Kostishko, Nagornov, Salomatin, Atazhanov.

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Kostishko, B.M., Nagornov, Y.S., Salomatin, S.Y. et al. The interface mechanism of photoluminescence in carbonized porous silicon. Tech. Phys. Lett. 30, 88–90 (2004). https://doi.org/10.1134/1.1666948

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