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The effect of annealing on the electroluminescence of SiO2 layers with excess silicon

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Abstract

We have studied the effect of annealing on the electroluminescence (EL) spectrum of Si-SiO2 structures containing excess ion-implanted silicon in the oxide layer. The implantation of 150-keV silicon ions to doses in the range from 5×1016 to 3×1017 cm−2 leads to the appearance of an intense emission band at 2.7 eV in the EL spectrum. The postimplantation annealing leads to a decrease in the intensity of this band and to the appearance of a new EL band at 1.6 eV assigned to radiative transitions in defect centers formed at the boundaries between silicon nanoclusters and silicon dioxide.

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Authors and Affiliations

  1. Institute of Physics, St. Petersburg State University, St. Petersburg, Russia

    A. P. Baraban, D. V. Egorov, Yu. V. Petrov & L. V. Miloglyadova

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  1. A. P. Baraban
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  2. D. V. Egorov
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  3. Yu. V. Petrov
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  4. L. V. Miloglyadova
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 30, No. 3, 2004, pp. 1–6.

Original Russian Text Copyright © 2004 by Baraban, Egorov, Petrov, Miloglyadova.

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Baraban, A.P., Egorov, D.V., Petrov, Y.V. et al. The effect of annealing on the electroluminescence of SiO2 layers with excess silicon. Tech. Phys. Lett. 30, 85–87 (2004). https://doi.org/10.1134/1.1666947

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  • DOI: https://doi.org/10.1134/1.1666947

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