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Base thickness determination from the punch-through voltage for vertical n-p-n transistors incorporated into I2L elements

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Abstract

A method of determining the base thickness of n-p-n transistors in I2L elements from the punch-through voltage is verified on test I2L structures.

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References

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Authors and Affiliations

  1. Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, 03028, Ukraine

    S. V. Shutov, A. N. Frolov, V. N. Litvinenko & A. A. Frolov

Authors
  1. S. V. Shutov
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  2. A. N. Frolov
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  3. V. N. Litvinenko
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  4. A. A. Frolov
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Additional information

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Translated from Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 74, No. 2, 2004, pp. 130–132.

Original Russian Text Copyright © 2004 by Shutov, A.N. Frolov, Litvinenko, A.A. Frolov.

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Shutov, S.V., Frolov, A.N., Litvinenko, V.N. et al. Base thickness determination from the punch-through voltage for vertical n-p-n transistors incorporated into I2L elements. Tech. Phys. 49, 269–271 (2004). https://doi.org/10.1134/1.1648969

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  • DOI: https://doi.org/10.1134/1.1648969

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