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Activation of a semiconductor surface by a pulsed magnetic field

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Abstract

The possibility of semiconductor surface activation, which shows up as a long-term increase in the adsorption capacity in response to a short exposure to a pulsed magnetic field, is demonstrated for the first time. Magnetic-field-induced surface activation is studied on silicon, germanium, and gallium arsenide crystals. The effect revealed extends the capabilities of thin-film growth on the semiconductor surface.

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Authors and Affiliations

  1. Voronezh State University, Universitetskaya pl. 1, Voronezh, 394693, Russia

    M. N. Levin, A. V. Tatarintsev, O. A. Kostsova & A. M. Kostsov

Authors
  1. M. N. Levin
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  2. A. V. Tatarintsev
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  3. O. A. Kostsova
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  4. A. M. Kostsov
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__________

Translated from Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 73, No. 10, 2003, pp. 85–87.

Original Russian Text Copyright © 2003 by Levin, Tatarintsev, Kostsova, Kostsov.

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Levin, M.N., Tatarintsev, A.V., Kostsova, O.A. et al. Activation of a semiconductor surface by a pulsed magnetic field. Tech. Phys. 48, 1304–1306 (2003). https://doi.org/10.1134/1.1620124

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  • DOI: https://doi.org/10.1134/1.1620124

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