Abstract
Porous silicon (PS) exhibits several photoluminescence (PL) bands, whose spectral position and intensity depend strongly on the actual conditions of preparation of PS, its treatment, and subsequent use. The PS PL band peaking at about 1.8 eV and usually assigned to the intrinsic emission of silicon nanocrystals was studied. It was shown that the temperature-induced variation of the PL kinetics in the 80 to 300-K interval follows a complex pattern and depends noticeably on the actual point on the band profile. The temperature behavior of PL decay in the 1.8-eV band is determined by the electron-hole recombination rate within a nanocrystal and the cascade carrier transitions from small to large nanocrystals, with an attendant decrease in energy.
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Translated from Fizika Tverdogo Tela, Vol. 45, No. 10, 2003, pp. 1800–1802.
Original Russian Text Copyright © 2003 by Agekyan, Stepanov.
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Agekyan, V.F., Stepanov, A.Y. The mechanism of emission in the red photoluminescence band of porous silicon. Phys. Solid State 45, 1890–1892 (2003). https://doi.org/10.1134/1.1620090
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DOI: https://doi.org/10.1134/1.1620090