Abstract
The strong effect of a magnetic field on the starting stress and mobility of individual dislocations is discovered in silicon grown by the Czochralski method with a high concentration of dissolved oxygen. It is shown that exposure of dislocations preliminarily introduced into the sample to a magnetic field considerably reduces the starting stresses for the motion of these dislocations. The effect is not observed in samples with a low oxygen concentration. It is assumed that the magnetic field induces singlet-triplet transitions in thermally excited states of silicon-oxygen complexes in the dislocation core, thus stimulating a change in the state (atomic configuration) of oxygen already located at dislocations. As a result, the mean binding energy of oxygen with a dislocation decreases.
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Translated from Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 124, No. 3, 2003, pp. 664–669.
Original Russian Text Copyright © 2003 by Badylevich, Iunin, Kveder, Orlov, Osip’yan.
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Badylevich, M.V., Iunin, Y.L., Kveder, V.V. et al. Effect of a magnetic field on the starting stress and mobility of individual dislocations in silicon. J. Exp. Theor. Phys. 97, 601–605 (2003). https://doi.org/10.1134/1.1618345
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DOI: https://doi.org/10.1134/1.1618345