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Effect of the composition of the solid solution on the high-temperature microhardness of SiGe heteroepitaxial layers grown on Ge and Si substrates

  • Defects, Dislocations, and Physics of Strength
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Abstract

The effect of the composition of epitaxial layers (ELs) of the SixGe1−x solid solution grown on Ge and Si substrates on their microhardness and the length of dislocation rosettes forming around indentations is studied at a homologous temperature 0.5T melt for each composition. For the SixGe1−x /Ge (0≤x<0.15) and SixGe1−x /Si (0.85<x≤1) ELs, the dependences of the microhardness and the length of dislocation rosettes on the solid-solution composition are nonmonotonic. The nonmonotonic change in the plasticity of the ELs is most likely caused by hardening of the solid solutions in a certain composition range due to their spinodal decomposition with the formation of clusters and disperse precipitates.

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References

  1. M. G. Mil’vidskii and V. B. Osvenskii, Defects of the Structure in Epitaxial Layers of Semiconductor Materials (Metallurgiya, Moscow, 1985).

    Google Scholar 

  2. I. Yonenaga, Physica B (Amsterdam) 273–274, 612 (1999).

    Google Scholar 

  3. B. Roos, H. Richter, and J. Wollweber, Solid State Phenom. 47–48, 509 (1996).

    Google Scholar 

  4. D. Y. Watts and A. F. W. Willoughby, Mater. Lett. 2, 355 (1984).

    Article  Google Scholar 

  5. V. M. Glazov and V. N. Vigdorovich, Microhardness of Metals and Semiconductors, 2nd ed. (Mir, Moscow, 1971).

    Google Scholar 

  6. V. R. Regel’, A. I. Slutsker, and É. E. Tomashevskii, Kinetic Nature of the Strength of Solids (Nauka, Moscow, 1974).

    Google Scholar 

  7. L. Garbato and A. Rucci, Philos. Mag. 35(6), 1681 (1977).

    Google Scholar 

  8. S. S. Gorelik, Yu. M. Litvinov, and M. G. Lozinskii, Élektron. Tekh., Ser. 6: Materialy 6, 54 (1975).

    Google Scholar 

  9. V. I. Vdovin, M. G. Mil’vidskii, T. G. Yugova, et al., J. Cryst. Growth 141, 109 (1994).

    Article  ADS  Google Scholar 

  10. T. G. Yugova, V. I. Vdovin, M. G. Mil’vidskii, et al., Thin Solid Films 336, 112 (1998).

    Article  Google Scholar 

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Authors and Affiliations

  1. Giredmet Federal State Unitary Enterprise, Bol’shoi Tolmachevskii per. 5, Moscow, 109017, Russia

    M. V. Mezhennyi, M. G. Mil’vidskii & T. G. Yugova

  2. Institute for Chemical Problems of Microelectronics, Bol’shoi Tolmachevskii per. 5, Moscow, 109017, Russia

    M. G. Mil’vidskii

Authors
  1. M. V. Mezhennyi
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  2. M. G. Mil’vidskii
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  3. T. G. Yugova
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__________

Translated from Fizika Tverdogo Tela, Vol. 45, No. 9, 2003, pp. 1641–1644.

Original Russian Text Copyright © 2003 by Mezhenny\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\), Mil’vidskii, Yugova.

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Mezhennyi, M.V., Mil’vidskii, M.G. & Yugova, T.G. Effect of the composition of the solid solution on the high-temperature microhardness of SiGe heteroepitaxial layers grown on Ge and Si substrates. Phys. Solid State 45, 1723–1726 (2003). https://doi.org/10.1134/1.1611240

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  • DOI: https://doi.org/10.1134/1.1611240

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