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Nonradiative recombination and kinetics of optically oriented electrons at the GaAs/AlGaAs interface

  • Semiconductors and Dielectrics
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Abstract

It is shown that optical orientation of electron spins in semiconductors can be used as a basis to develop a high-sensitivity method for measuring the dependence of the lifetime of carriers on their concentration. Experiments performed in a stationary regime on a GaAs/AlGaAs heterostructure at low excitation levels provided insight into the nonradiative recombination of electrons and holes separated by an electric field built into the interface.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    R. I. Dzhioev & K. V. Kavokin

Authors
  1. R. I. Dzhioev
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  2. K. V. Kavokin
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__________

Translated from Fizika Tverdogo Tela, Vol. 45, No. 9, 2003, pp. 1566–1568.

Original Russian Text Copyright © 2003 by Dzhioev, Kavokin.

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Dzhioev, R.I., Kavokin, K.V. Nonradiative recombination and kinetics of optically oriented electrons at the GaAs/AlGaAs interface. Phys. Solid State 45, 1644–1647 (2003). https://doi.org/10.1134/1.1611226

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  • DOI: https://doi.org/10.1134/1.1611226

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