Abstract
A study of the variation of photoluminescence spectra of bulk Eu-doped GaN samples revealed that the dopant can reside in the crystal in various charge states depending on the total defect concentration in the starting semiconductor host matrix. In crystals with the lowest concentration of shallow-level defects, the ion can exist only in one charge state, Eu3+. At higher concentrations of such defects, Eu can be observed in two charge states, Eu2+ and Eu3+. A rare-earth impurity was found to act as a getter of defects in the starting GaN matrix.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
A. J. Steckl and B. Birkhahn, Appl. Phys. Lett. 73, 1700 (1998).
A. J. Steckl, M. Garter, B. Birkhahn, and J. D. Scofield, Appl. Phys. Lett. 74, 2161 (1999).
S. Kim, S. J. Rhee, and D. A. Turnbull, Appl. Phys. Lett. 71, 2662 (1997).
P. H. Citrtn, P. A. Northrup, R. Birkhahn, and A. J. Steckl, Appl. Phys. Lett. 76, 2865 (2000).
L. S. Vlasenko, A. T. Gorelenok, V. V. Emtsev, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 35(2), 184 (2001) [Semiconductors 35, 177 (2001)].
V. V. Krivolapchuk, M. M. Mezdrogina, S. D. Raevskii, et al., Pis’ma Zh. Tekh. Fiz. 28(7), 19 (2002) [Tech. Phys. Lett. 28, 270 (2002)].
Yu. V. Zhilyaev, A. S. Adrianov, M. M. Mezdrogina, et al., in Abstracts of II Russian Conference on Physics of Semiconductors, Novosibirsk (1999), p. 56.
R. A. Street, Adv. Phys. 30, 593 (1981).
S. Permogorov and A. Reznitsky, J. Lumin. 52, 201 (1992).
E. Cohen and M. Sturge, Phys. Rev. B 25, 3828 (1982).
A. Klochikhin, A. Reznitsky, S. Permogorov, et al., Phys. Rev. B 59, 12947 (1999).
E. Iliopoulos, D. Doppalapudi, H. M. Ng, and T. D. Moustakas, Appl. Phys. Lett. 73, 375 (1998).
R. Dingle, D. D. Seil, S. E. Stakowsky, and M. Ilegems, Phys. Rev. B 4, 1211 (1971).
V. Kiroilyuk, P. H. Hageman, and M. Zielenski, Appl. Phys. Lett. 79, 4109 (1999).
V. Yu. Nekrasov, P. V. Belyakov, O. M. Sreseli, and N. N. Zinov’ev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 33(12), 1428 (1999) [Semiconductors 33, 1284 (1999)].
H. I. Lozykowski, Phys. Rev. B 48, 17758 (1993).
M. M. Mezdrogina, I. N. Trapeznikova, E. I. Terukov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 36(11), 1337 (2002) [Semiconductors 36, 1252 (2002)].
S. V. Thiel, H. Cruguel, H. Wu, et al., Phys. Rev. B 64, 085107 (2001).
A. N. Georgobiani, A. N. Gruzintsev, M. O. Vorob’ev, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 35(6), 725 (2001) [Semiconductors 35, 695 (2001)].
J. Heikenfeld, M. Garter, D. S. Lee, et al., Appl. Phys. Lett. 75, 1189 (1999).
Author information
Authors and Affiliations
Additional information
__________
Translated from Fizika Tverdogo Tela, Vol. 45, No. 9, 2003, pp. 1556–1559.
Original Russian Text Copyright © 2003 by Krivolapchuk, Mezdrogina, Nasonov, Rodin.
Rights and permissions
About this article
Cite this article
Krivolapchuk, V.V., Mezdrogina, M.M., Nasonov, A.V. et al. Photoluminescence of bulk Eu-doped GaN crystals. Phys. Solid State 45, 1634–1637 (2003). https://doi.org/10.1134/1.1611224
Received:
Issue Date:
DOI: https://doi.org/10.1134/1.1611224