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Infralow-frequency oscillations in photoconductivity of chromium-doped silicon

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Abstract

The photoconductivity of chromium-doped silicon at T=4.2 K under constant illumination in the fundamental absorption band exhibits infralow-frequency oscillations at 10−2 Hz, the amplitude of which sharply increase with the illumination intensity. No such oscillations are observed in samples of n-Si〈Cr〉 or in chromium-free p-Si and n-Si control samples. A model qualitatively explaining the appearance of such oscillations is proposed, which is based on the fact that chromium in silicon can occur in two states, one being electrically (and recombination) active, and the other, inactive.

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Authors and Affiliations

  1. Physicotechnical Institute, “Solar Physics” Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan

    Kh. Kh. Dzhuliev, A. Yu. Leiderman & A. T. Mamadalimov

Authors
  1. Kh. Kh. Dzhuliev
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  2. A. Yu. Leiderman
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  3. A. T. Mamadalimov
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 29, No. 15, 2003, pp. 49–54.

Original Russian Text Copyright © 2003 by Dzhuliev, Leiderman, Mamadalimov.

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Dzhuliev, K.K., Leiderman, A.Y. & Mamadalimov, A.T. Infralow-frequency oscillations in photoconductivity of chromium-doped silicon. Tech. Phys. Lett. 29, 638–640 (2003). https://doi.org/10.1134/1.1606773

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  • DOI: https://doi.org/10.1134/1.1606773

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