Abstract
The thermo emf in Czochralski grown silicon single crystals annealed at 450°C was experimentally studied in a range of pressures up to 16 GPa in a chamber with synthetic diamond anvils. There is a correlation between the curves of thermo emf versus pressure, the semiconductor-metal transition pressure, and the mechanical properties (microhardness, compressibility) of samples with various oxygen content. The values of thermo emf in the high-pressure metallic phases have been determined.
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References
W. P. Eaton and J. H. Smith, Smart Mater. Struct. 6, 530 (1997).
I. V. Antonova, A. Misiuk, V. P. Popov, et al., Physica B 225, 251 (1996).
I. V. Antonova, A. Misiuk, V. P. Popov, et al., Physica B 253, 131 (1998).
V. V. Emtsev, G. A. Oganesyan, and K. Shmal’ts, Fiz. Tekh. Poluprovodn. (St. Petersburg) 27, 1549 (1993) [Semiconductors 27, 856 (1993)].
S. Minomura and H. D. Drickamer, J. Phys. Chem. Solids 23, 451 (1962).
F. P. Bundy, J. Chem. Phys. 41, 3809 (1964).
H. Olijnyk, S. K. Sikka, and W. B. Holzapfel, Phys. Lett. A 103A, 137 (1984).
Zh. H. Jing, L. D. Merkle, C. S. Menoni, et al., Phys. Rev. B 34, 4679 (1986).
M. I. McMahon, R. J. Nelmes, N. G. Wright, et al., Phys. Rev. B 50, 739 (1994).
M. Hebbache, M. Mattesini, and J. Szefiel, Phys. Rev. B 63, 205201 (2001).
J. M. Mignot, G. Chouteau, and G. Martinez, Physica B 135, 235 (1985).
R. Biswas and M. Kertesz, Phys. Rev. B 29, 1791 (1984).
S. D. Gilev and A. M. Trubachev, Phys. Status Solidi B 211, 379 (1999).
V. V. Shchennikov, Fiz. Met. Metalloved. 67, 93 (1989).
V. V. Shchennikov, A. Yu. Derevskov, et al., in Book of Abstracts of the 36th European High Pressure Research Group (EHPRG) Meeting (Catania, 1998), pp. 121–122; Proc. SPIE 3213, 261 (1997).
V. V. Shchennikov, Phys. Status Solidi B 223, 561 (2001).
L. Weber, M. Lehr, and E. Gmelin, Phys. Rev. B 46, 9511 (1992).
L. G. Khvostantsev, L. F. Vereshchagin, and N. M. Uliyanitskaya, High Temp.-High Press. 5, 261 (1973).
D. A. Polvani, J. F. Meng, M. Hasegawa, et al., Rev. Sci. Instrum. 70, 3586 (1999).
I. M. Tsidil’kovskii, V. V. Shchennikov, and N. G. Gluzman, Fiz. Tverd. Tela (Leningrad) 24, 958 (1982) [Sov. Phys. Solid State 24, 1507 (1982)].
N. Sakai, K. Takemura, and K. Tsuji, J. Phys. Soc. Jpn. 51, 1811 (1982).
V. V. Shchennikov and A. V. Bazhenov, Rev. High Pressure Sci. Technol. 6, 657 (1997).
V. V. Shchennikov and A. Yu. Derevskov, in High Pressure Chemical Engineering, Ed. by R. V. Rohr and Ch. Trepp (Elsevier, Amsterdam, 1996), pp. 667–672.
O. Shimomura, S. Minomura, N. Sakai, et al., Philos. Mag. 29, 547 (1974).
Y.-X. Zhao, F. Buehler, J. R. Sites, et al., Solid State Commun. 59, 679 (1986).
Yu. S. Boyarskaya, D. Z. Grabko, and M. S. Kats, Physics of Microindentation Processes (Shtiintsa, Kishinev, 1986).
V. G. Eremenko and V. I. Nikitenko, Phys. Status Solidi A 14, 317 (1972).
I. V. Gridneva, Yu. V. Milman, and V. I. Trefilov, Phys. Status Solidi A 14, 177 (1972).
Y. J. Lee, J. von Boehm, and R. M. Nieminen, Appl. Phys. Lett. 79, 1453 (2001).
K. Jurkschat, S. Senkader, P. R. Wilshaw, et al., J. Appl. Phys. 90, 3219 (2001).
H. Harada and K. Sumino, J. Appl. Phys. 53, 4838 (1982).
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 29, No. 14, 2003, pp. 57–65.
Original Russian Text Copyright © 2003 by Shchennikov, Popova, Misiuk.
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Shchennikov, V.V., Popova, S.V. & Misiuk, A. Thermoelectric properties of silicon at high pressures in the region of the semiconductor-metal transition. Tech. Phys. Lett. 29, 598–601 (2003). https://doi.org/10.1134/1.1598561
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DOI: https://doi.org/10.1134/1.1598561