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The effect of neutron irradiation on the exciton absorption in gallium arsenide

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Abstract

We have studied the effect of neutron irradiation on the exciton absorption in n-GaAs crystals. It is shown that the observed decrease in the absorption coefficient, broadening of the exciton peak, and its shift toward higher energies are caused by the electric and strain (compression) fields generated by the radiation-induced defects.

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Authors and Affiliations

  1. Tbilisi State University, Tbilisi, Georgia

    Z. V. Jibuti, N. D. Dolidze, B. E. Tsekvava & G. L. Eristavi

Authors
  1. Z. V. Jibuti
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  2. N. D. Dolidze
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  3. B. E. Tsekvava
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  4. G. L. Eristavi
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 29, No. 13, 2003, pp. 26–30.

Original Russian Text Copyright © 2003 by Jibuti, Dolidze, Tsekvava, Eristavi.

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Jibuti, Z.V., Dolidze, N.D., Tsekvava, B.E. et al. The effect of neutron irradiation on the exciton absorption in gallium arsenide. Tech. Phys. Lett. 29, 540–541 (2003). https://doi.org/10.1134/1.1598542

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  • DOI: https://doi.org/10.1134/1.1598542

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