Skip to main content
Log in

Processing of intensities of electron scattering from amorphous silicon by methods of continuous wavelet analysis

  • Diffraction and Scattering of Ionizing Radiations
  • Published:
Crystallography Reports Aims and scope Submit manuscript

Abstract

It is shown that intensities of electron scattering from amorphous silicon can be processed by the methods of wavelet analysis. The coordination radii for amorphous silicon at various annealing temperatures are calculated using the intensity distribution of coefficients of the wavelet transform.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. A. F. Skryshevskii, Structure Analysis of Liquids and Amorphous Materials (Vysshaya Shkola, Moscow, 1980).

    Google Scholar 

  2. L. I. Tatarinova, Electron Diffraction from Amorphous Materials (Nauka, Moscow, 1972).

    Google Scholar 

  3. N. M. Astaf'eva, Usp. Fiz. Nauk 166(11), 1145 (1996) [Phys. Usp. 39, 1085 (1996)].

    Google Scholar 

  4. V. I. Vorob'ev and V. G. Gribulin, Theory and Practice of the Wavelet Transformation (VUS, St. Petersburg, 1999).

    Google Scholar 

  5. A. F. Khokhlov and A. I. Mashin, Allotropy of Silicon (Nizhegor. Gos. Univ., Nizhni Novgorod, 2002).

    Google Scholar 

  6. E. V. Chuprunov, A. F. Khokhlov, and M. A. Faddeev, Crystallography (Fizmatlit, Moscow, 2000).

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Additional information

__________

Translated from Kristallografiya, Vol. 48, No. 4, 2003, pp. 598–601.

Original Russian Text Copyright © 2003 by Mashin, Morozov, Smelova, Soldatov.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Mashin, A.I., Morozov, O.A., Smelova, E.V. et al. Processing of intensities of electron scattering from amorphous silicon by methods of continuous wavelet analysis. Crystallogr. Rep. 48, 547–550 (2003). https://doi.org/10.1134/1.1595176

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1134/1.1595176

Keywords

Navigation