Abstract
It is shown that intensities of electron scattering from amorphous silicon can be processed by the methods of wavelet analysis. The coordination radii for amorphous silicon at various annealing temperatures are calculated using the intensity distribution of coefficients of the wavelet transform.
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Translated from Kristallografiya, Vol. 48, No. 4, 2003, pp. 598–601.
Original Russian Text Copyright © 2003 by Mashin, Morozov, Smelova, Soldatov.
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Mashin, A.I., Morozov, O.A., Smelova, E.V. et al. Processing of intensities of electron scattering from amorphous silicon by methods of continuous wavelet analysis. Crystallogr. Rep. 48, 547–550 (2003). https://doi.org/10.1134/1.1595176
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DOI: https://doi.org/10.1134/1.1595176