Skip to main content
SpringerLink
Log in

Simulation of a significant increase in the transconductance of MOS transistors due to sectioning of the channel

  • Physics
  • Published:
Doklady Physics Aims and scope Submit manuscript

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

References

  1. V. A. Gergel’ and V. G. Mokerov, Dokl. Akad. Nauk 375, 609 (2000) [Dokl. Phys. 45, 647 (2000)].

    Google Scholar 

  2. V. A. Gergel’, V. G. Mokerov, M. V. Timofeev, and Yu. V. Fedorov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 239 (2000) [Semiconductors 34, 233 (2000)].

    Google Scholar 

  3. T. Enoki, S. Sugitani, and Y. Yamane, IEEE Trans. Electron Devices 37, 935 (1990).

    Article  Google Scholar 

  4. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981; Mir, Moscow, 1984), Vol. 2.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, ul. Mokhovaya 18, Moscow, 103907, Russia

    V. A. Gergel’,  Yu. V. Gulyaev, A. P. Zelenyi & M. N. Yakupov

Authors
  1. V. A. Gergel’
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Yu. V. Gulyaev
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. A. P. Zelenyi
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. M. N. Yakupov
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

__________

Translated from Doklady Akademii Nauk, Vol. 390, No. 4, 2003, pp. 465–467.

Original Russian Text Copyright © 2003 by Gergel’, Gulyaev, Zeleny\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Yakupov.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Gergel’, V.A., Gulyaev, Y.V., Zelenyi, A.P. et al. Simulation of a significant increase in the transconductance of MOS transistors due to sectioning of the channel. Dokl. Phys. 48, 261–263 (2003). https://doi.org/10.1134/1.1591309

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1134/1.1591309

Search

Navigation