Abstract
Oxidized porous silicon is a nanocomposite material. The current-voltage characteristics of MOS structures based on this material exhibit some special features (large plateau, oscillations), which can be considered as manifestations of quantum size effects.
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 29, No. 11, 2003, pp. 41–44.
Original Russian Text Copyright © 2003 by Ablova, Zamoryanskaya, Sokolov, Khasanov.
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Ablova, M.S., Zamoryanskaya, M.V., Sokolov, V.I. et al. Peculiarities of the current-voltage characteristics of oxidized porous silicon. Tech. Phys. Lett. 29, 459–460 (2003). https://doi.org/10.1134/1.1589557
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DOI: https://doi.org/10.1134/1.1589557