Abstract
Spatial dynamics of a negative photoinduced lens in a semiconductor with deep impurity levels has been numerically modeled. A relation between the axial profile of the dynamic lens and the onset of self-defocusing leading to the optical confinement.
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 29, No. 7, 2003, pp. 77–81.
Original Russian Text Copyright © 2003 by Sidorov.
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Sidorov, A.I. Photoinduced lens dynamics near the optical confinement threshold in extrinsic semiconductors. Tech. Phys. Lett. 29, 300–301 (2003). https://doi.org/10.1134/1.1573297
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DOI: https://doi.org/10.1134/1.1573297