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Refraction of thermalized electrons emitted ballistically into vacuum from p +-GaAs-(Cs,O)

  • Condensed Matter
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Abstract

The refraction of thermalized photoelectrons emitted into vacuum from p +-GaAs-(Cs,O) with a negative electron affinity was observed. The refraction is caused by a jump in electron effective mass at the semiconductor-vacuum interface. It was observed only for a small group of electrons that were emitted ballistically into vacuum without scattering of the tangential momentum component at the interface.

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Translated from Pis’ma v Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 77, No. 4, 2003, pp. 197–201.

Original Russian Text Copyright © 2003 by Bakin, Pakhnevich, Kosolobov, Scheibler, Jaroshevich, Terekhov.

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Bakin, V.V., Pakhnevich, A.A., Kosolobov, S.N. et al. Refraction of thermalized electrons emitted ballistically into vacuum from p +-GaAs-(Cs,O). Jetp Lett. 77, 167–171 (2003). https://doi.org/10.1134/1.1571875

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  • DOI: https://doi.org/10.1134/1.1571875

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