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Unconventional magnetoresistance in long InSb nanowires

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Abstract

Magnetoresistance in long correlated nanowires of degenerate semiconductor InSb in asbestos matrix (wire diameter of around 5 nm, length 0.1–1 mm) is studied in the temperature range 2.3–300 K. At zero magnetic field, the electric conduction G and the current-voltage characteristics of such wires obey the power laws GT α, IV β, expected for one-dimensional electron systems. The effect of the magnetic field corresponds to a 20% growth of the exponents α, β at H = 10 T. The observed magnetoresistance is caused by the magnetic-field-induced breaking of the spin-charge separation and represents a novel mechanism of magnetoresistance.

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From Pis’ma v Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 77, No. 3, 2003, pp. 162–166.

Original English Text Copyright © 2003 by Zaitsev-Zotov, Kumzerov, Firsov, Monceau.

This article was submitted by the authors in English.

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Zaitsev-Zotov, S.V., Kumzerov, Y.A., Firsov, Y.A. et al. Unconventional magnetoresistance in long InSb nanowires. Jetp Lett. 77, 135–139 (2003). https://doi.org/10.1134/1.1567775

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  • DOI: https://doi.org/10.1134/1.1567775

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