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Tunneling magnetoresistance in a Eu0.7Pb0.3MnO3 (single crystal)-Fe (film) structure

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Abstract

We have studied the magnetoresistive properties of a structure comprising single crystal manganite Eu0.7Pb0.3MnO3 covered with an epitaxial iron film. At temperatures below T C of the manganite crystal, the structure exhibits positive magnetoresistance. The behavior of the resistance as a function of the magnetic field is characteristic of a tunneling junction with ferromagnetic electrodes separated by a thin insulating film. The observed effect is related to the formation of a transition layer at the manganite-Fe interface, which is depleted of oxygen and possesses dielectric properties. The sensitivity of the resistance with respect to the magnetic field is determined both by the negative magnetoresistance of the manganite crystal and by the tunneling contribution to the conductivity, whereby the tunneling current depends on the mutual orientation of magnetic moments of the electrodes (Eu0.7Pb0.3MnO3 crystal and Fe film).

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Authors and Affiliations

  1. Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Krasnoyarsk, Russia

    N. V. Volkov, G. S. Patrin, G. A. Petrakovskii, K. A. Sablina, S. G. Ovchinnikov & S. N. Varnakov

  2. Krasnoyarsk State University, Krasnoyarsk, Russia

    N. V. Volkov, G. S. Patrin, G. A. Petrakovskii, K. A. Sablina, S. G. Ovchinnikov & S. N. Varnakov

Authors
  1. N. V. Volkov
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  2. G. S. Patrin
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  3. G. A. Petrakovskii
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  4. K. A. Sablina
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  5. S. G. Ovchinnikov
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  6. S. N. Varnakov
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 29, No. 5, 2003, pp. 54–60.

Original Russian Text Copyright © 2003 by Volkov, Patrin, Petrakovskii, Sablina, Ovchinnikov, Varnakov.

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Volkov, N.V., Patrin, G.S., Petrakovskii, G.A. et al. Tunneling magnetoresistance in a Eu0.7Pb0.3MnO3 (single crystal)-Fe (film) structure. Tech. Phys. Lett. 29, 200–202 (2003). https://doi.org/10.1134/1.1565633

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  • DOI: https://doi.org/10.1134/1.1565633

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