Abstract
We have studied the electrical properties of thin ferroelectric films of barium strontium titanate (BaxSr1−x TiO3) obtained on fused quartz (SiO2) substrates by RF magnetron sputtering. Dependences of the tuning coefficient and dielectric loss tangent on the synthesis temperature and the film thickness are reported. The results are compared to analogous data for films grown on polycrystalline alumina substrates.
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 29, No. 5, 2003, pp. 1–7.
Original Russian Text Copyright © 2003 by Razumov, Tumarkin, Sysa, Gagarin.
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Razumov, S.V., Tumarkin, A.V., Sysa, M.V. et al. Electrical properties of thin BaxSr1−x TiO3 films on silicon dioxide substrates. Tech. Phys. Lett. 29, 175–177 (2003). https://doi.org/10.1134/1.1565625
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DOI: https://doi.org/10.1134/1.1565625