Abstract
An exact solution is obtained to the problem of the spectrum of holes, described by the Luttinger Hamiltonian, in a quantum well of finite depth under arbitrary uniaxial stresses in the well and the barrier. Conditions for the topological transitions accompanied by the variation in the connectivity of the isoenergetic surface are found. It is shown that, for certain values of model parameters, the effective mass of holes in the ground-state subband of size quantization becomes negative.
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References
L. D. Landau and E. M. Lifshitz, Course of Theoretical Physics, Vol. 3: Quantum Mechanics: Non-Relativistic Theory, 3rd ed. (Nauka, Moscow, 1974; Pergamon, New York, 1977).
S. S. Nedorezov, Fiz. Tverd. Tela (Leningrad) 12, 2269 (1970) [Sov. Phys. Solid State 12, 1814 (1970)].
A. Matulis and K. Piragas, Fiz. Tekh. Poluprovodn. (Leningrad) 11, 2202 (1975) [Sov. Phys. Semicond. 9, 1432 (1975)].
M. I. D’yakonov and A. V. Khaetskii, Zh. Éksp. Teor. Fiz. 82, 1584 (1982) [Sov. Phys. JETP 55, 917 (1982)].
G. S. Osbourn, Phys. Rev. B 27, 5126 (1983).
A. R. Adams, Electron. Lett. 22, 249 (1986).
W. W. Chow and S. W. Koch, Semiconductor Laser Fundamentals: Physics of the Gain Materials (Springer, New York, 1999).
S.-C. Hong, G. P. Kothial, N. Debbar, et al., Phys. Rev. B 37, 878 (1988).
M. Shur, Physics of Semiconductor Devices (Prentice Hall, Englewood Cliffs, N.J., 1990; Mir, Moscow, 1992), Vol. 1.
O. V. Kibis and L. D. Shvartsman, Poverkhnost 7, 119 (1985).
L. C. Andreani, A. Pasquarelo, and F. Bassani, Phys. Rev. B 36, 5887 (1987).
G. Bastard, J. A. Brum, and R. Ferreira, Solid State Phys. 44, 229 (1991).
C. Weisbuch and B. Vinter, Quantum Semiconductor Structures: Fundamentals and Applications (Academic, San Diego, 1991).
M. Cardona and H. Yu, Fundamentals of Semiconductors: Physics and Materials Properties (Springer, Berlin, 1999).
I. M. Lifshits, Zh. Éksp. Teor. Fiz. 38, 1569 (1960) [Sov. Phys. JETP 11, 1130 (1960)].
I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, Phys. Rev. B 89, 5815 (2001).
A. A. Gorbatsevich and O. V. Zhabitsky, in Proceedings of 7th International Symposium on Nanostructures: Physics and Technology (St. Petersburg, 1999), p. 368.
D. A. Broido and L. J. Sham, Phys. Rev. B 31, 888 (1985); Phys. Rev. B 34, 3917 (1986).
C. Y.-P. Chao and S. L. Chuang, Phys. Rev. B 46, 4110 (1992).
B. A. Foreman, Phys. Rev. B 48, 4964 (1993).
I. V. Tokatly, A. G. Tsibizov, and A. A. Gorbatsevich, Phys. Rev. B 65, 165328 (2002).
O. V. Kibis, Fiz. Tekh. Poluprovodn. (Leningrad) 23, 820 (1989) [Sov. Phys. Semicond. 23, 514 (1989)].
J. Faist, F. Capasso, D. L. Sivco, et al., Science B 264, 553 (1994).
A. F. Kazarinov and R. A. Suris, Fiz. Tekh. Poluprovodn. (Leningrad) 5, 797 (1971) [Sov. Phys. Semicond. 5, 707 (1971)].
J. E. Guyer, S. A. Barnett, and P. W. Voorhees, J. Cryst. Growth 217, 1 (2000).
W. Potz, W. Porod, and D. K. Ferry, Phys. Rev. B 32, 3868 (1985).
S. De Franceschi, J.-M. Jancu, and F. Beltram, Phys. Rev. B 59, 9691 (1999).
T. Ando, A. B. Fowler, and F. Stern, in Electronic Properties of Two-Dimensional Systems (Am. Phys. Soc., New York, 1982; Mir, Moscow, 1985).
P. M. Platzman and T. Lenosky, Phys. Rev. B 52, 10327 (1995).
V. V. Kapaev and Yu. V. Kopaev, Pis’ma Zh. Éksp. Teor. Fiz. 68, 211 (1998) [JETP Lett. 68, 223 (1998)].
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Translated from Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Fiziki, Vol. 123, No. 1, 2003, pp. 172–188.
Original Russian Text Copyright © 2003 by Gorbatsevich, Zhabitsky.
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Gorbatsevich, A.A., Zhabitsky, O.V. Topological transitions in size-quantized heterostructures. J. Exp. Theor. Phys. 96, 150–164 (2003). https://doi.org/10.1134/1.1545394
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DOI: https://doi.org/10.1134/1.1545394